BAR 64-04 E6327

BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Product description This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 μm I-region width, combined with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics. Feature list • • • • • Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical) Very low capacitance C = 0.22 pF (typical) at voltage VR = 0 and frequencies f ≥ 1 Ghz Low forward resistance RF = 2.3 Ω (typical) at forward current IF = 10 mA and frequency f = 100 MHz Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm) Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Optimized for low bias current RF and high-speed interface switches and attenuators • Wireless communication • High speed data networks Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAR64-04 / BAR6404E6327HTSA1 SOT23-3 Series pair PPs 3k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 2.1 2.2 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package information SOT23-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Values Min. Unit Note or test condition Max. Diode reverse voltage VR – 150 V Forward current IF – 100 mA Total power dissipation PTOT – 250 mW Junction temperature TJ – 150 °C Operating temperature TOP -55 125 Storage temperature TSTG -55 150 TS ≤ 126 °C 1) Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 TS is the soldering point temperature. Datasheet 2 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Electrical performance in test fixture 2 Electrical performance in test fixture 2.1 DC characteristics At TA = 25 °C, unless otherwise specified Table 3 DC characteristics Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Breakdown voltage VBR 150 – – V IR = 5 µA Reverse current IR – – 20 nA VR = 20 V Forward voltage VF – 0.82 – V IF = 10 mA – 0.9 – IF = 50 mA – 0.95 1.1 IF = 100 mA – 50 – I-region width WI μm 10 2 I F [mA] 10 1 10 0 10 -1 10 -2 10 -3 0.2 0.4 0.6 0.8 1 1.2 V F [V] Figure 1 Datasheet Forward current IF vs. forward voltage VF 3 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Electrical performance in test fixture 2.2 AC characteristics At TA = 25 °C, unless otherwise specified Table 4 Key parameter Parameter Symbol Capacitance C Forward resistance RF Values Unit Note or test condition pF VR = 0 V, f = 1 MHz Min. Typ. Max. – 0.6 – – 0.23 0.35 VR = 20 V, f = 1 MHz – 10.7 20 IF = 1 mA, f = 100 MHz – 4.6 – IF = 3 mA, f = 100 MHz – 3.3 – IF = 5 mA, f = 100 MHz – 2.3 2.8 IF = 10 mA, f = 100 MHz – – 1.35 IF = 100 mA, f = 100 MHz Inductance Ls – 1.8 – nH Charge carrier lifetime τrr – 1550 – ns IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω Unit Note or test condition Table 5 AC parameter f = 1 GHz Parameter Symbol Values Min. Typ. Max. Capacitance C – 0.22 – pF VR = 0 V Reverse parallel resistance RP – 3.5 – kΩ VR = 0 V Forward resistance RF – 10.4 – Ω IF = 1 mA – 4.7 – IF = 3 mA – 3.5 – IF = 5 mA – 2.5 – IF = 10 mA – 0.87 – – 0.42 – IF = 3 mA – 0.32 – IF = 5 mA – 0.24 – IF = 10 mA – 17.5 – VR = 0 V Insertion loss IL Isolation Table 6 ISO dB IF = 1 mA AC parameter at f = 1.8 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Capacitance C – 0.22 – pF VR = 0 V Reverse parallel resistance RP – 2.8 – kΩ VR = 0 V Datasheet 4 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Electrical performance in test fixture Table 6 AC parameter at f = 1.8 GHz (continued) Parameter Symbol Forward resistance RF Insertion loss IL Isolation Table 7 ISO Values Unit Note or test condition Ω IF = 1 mA Min. Typ. Max. – 10.5 – – 4.8 – IF = 3 mA – 3.6 – IF = 5 mA – 2.6 – IF = 10 mA – 0.92 – – 0.48 – IF = 3 mA – 0.38 – IF = 5 mA – 0.3 – IF = 10 mA – 12.8 – VR = 0 V dB IF = 1 mA AC parameter at f = 2.5 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Capacitance C – 0.22 – pF VR = 0 V Reverse parallel resistance RP – 2.5 – kΩ VR = 0 V Forward resistance RF – 10.8 – Ω IF = 1 mA – 5 – IF = 3 mA – 3.8 – IF = 5 mA – 2.8 – IF = 10 mA – 0.99 – – 0.56 – IF = 3 mA – 0.46 – IF = 5 mA – 0.35 – IF = 10 mA – 10.4 – VR = 0 V Insertion loss Isolation Datasheet IL ISO 5 dB IF = 1 mA v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Electrical performance in test fixture 0.6 0.5 C [pF] 0.4 1 MHz 1 GHz 1.8...3 GHz 0.3 0.2 0.1 0 5 10 15 20 25 30 35 40 VR [V] Figure 2 Capacitance C vs. reverse voltage VR at different frequencies Figure 3 Reverse parallel resistance RP vs. reverse voltage VR at different frequencies Datasheet 6 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Electrical performance in test fixture Figure 4 Forward resistance RF vs. forward current IF at different frequencies 0 -0.2 I L [dB] -0.4 100 mA 10 mA 5 mA 3 mA 1 mA -0.6 -0.8 -1 0 1 2 3 4 5 6 f [GHz] Figure 5 Datasheet Insertion loss IL vs. frequency f at different forward currents 7 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Electrical performance in test fixture 0 -5 I SO [dB] -10 -15 -20 -25 0V 1V 10 V -30 -35 0 1 2 3 4 5 6 f [GHz] Figure 6 Note: Datasheet Isolation ISO vs. frequency f at different reverse voltages The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. 8 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Thermal characteristics 3 Thermal characteristics Table 8 Thermal resistance Parameter Sym bol Thermal resistance (junction - soldering point) RthJS Values Min. Typ. Max. – 95 – Unit Note or test condition K/W TS = 126 °C 2) 120 100 I F [mA] 80 60 40 20 0 0 20 40 60 80 100 120 140 160 T S [°C] Figure 7 2 Permissible forward current IF in DC operation For RthJS in other conditions refer to the curves in this chapter. Datasheet 9 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Thermal characteristics Figure 8 Thermal resistance RthJS in pulse operation Figure 9 Permissible forward current ratio IFmax/IDC in pulse operation Datasheet 10 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Package information SOT23-3 4 Package information SOT23-3 Figure 10 Package outline Figure 11 Foot print Figure 12 Marking layout example Figure 13 Tape dimensions Datasheet 11 v1.0 2018-06-30 BAR64-04 Low signal distortion, surface mount RF PIN diode, series pair Revision history Revision history Document version Date of release Description of changes 1.0 2018-09-07 • • • • • 1.1 Datasheet 2019-01-21 Change from series datasheet to individual one Initial release of datasheet Typical values and curves updated to the values of the production (No product or process change behind) Maximum/typical values added Typical curves/values removed Product description, feature list and potential application section reworked 12 v1.0 2018-06-30 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-06-30 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-xtp1535447359276 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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